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arXiv:0710.0249

Strong-to-weak-coupling duality in the nonequilibrium interacting resonant-level model

Avraham Schiller, Natan Andrei

Published Oct 1, 2007• 10 citations
arXivHTMLPDF

Abstract

A strong-to-weak-coupling duality is established for the nonequilibrium interacting resonant-level model, describing tunneling through a single spinless level, capacitively coupled to two leads by a contact interaction. For large capacitive coupling, U, and in the presence of a finite voltage bias, the model maps onto an equivalent model with a small capacitive coupling ρU' \sim 1/ ρU. Here ρis the conduction-electron density of states. This duality is generic to all high-energy cutoff schemes, however its details may vary from one regularization scheme to another. In particular, it has the status of an exact mapping within Abelian bosonization, applicable to all repulsive interactions whether weak, intermediate or strong. On a lattice the mapping is restricted to large U, and is controlled by the small parameter 1/ρU. Explicit expressions are given for the low-energy scale, differential conductance, and occupancy of the level in the limit where U is large.

DOI
10.48550/arxiv.0710.0249

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A strong-to-weak-coupling duality is established for the nonequilibrium interacting resonant-level model, describing tunneling through a single spinless level, capacitively coupled to two leads by a contact interaction. For large capacitive coupling, U, and in the presence of a finite voltage bias, the model maps onto an equivalent model with a small capacitive coupling ρU' \sim 1/ ρU. Here ρis the conduction-electron density of states. This duality is generic to all high-energy cutoff schemes, however its details may vary from one regularization scheme to another. In particular, it has the status of an exact mapping within Abelian bosonization, applicable to all repulsive interactions whether weak, intermediate or strong. On a lattice the mapping is restricted to large U, and is controlled by the small parameter 1/ρU. Explicit expressions are given for the low-energy scale, differential conductance, and occupancy of the level in the limit where U is large.
The spinless resonant level model is studied when it is coupled by hopping to one of the arbitrary numbers of conduction-electron channels. The Coulomb interaction acts between the electron on the impurity and in the different channels. In the case of a repulsive or attractive interaction the conduction electrons are pushed away or attracted to ease or hinder the hopping by creating unoccupied or occupied states, respectively. In the screening of the hopping orthogonality catastrophe plays an important role. At equilibrium in the weak- and strong-coupling limits the renormalizations are treated by perturbative, numerical, and Anderson-Yuval Coulomb gas methods. In the case of two leads the current due to applied voltage is treated in the weak-coupling limit. The presented detailed study should help to test other methods suggested for nonequilibrium transport.
The Sachdev-Ye-Kitaev (SYK) model describes a strongly correlated metal with all-to-all random interactions (average strength JJJ) between NNN fermions (complex Dirac fermions or real Majorana fermions). In the large-NNN limit a conformal symmetry emerges that renders the model exactly soluble. Here we study how the non-Fermi-liquid behavior of the closed system in equilibrium manifests itself in an open system out of equilibrium. We calculate the current-voltage characteristic of a quantum dot, described by the complex-valued SYK model, coupled to a voltage source via a single-channel metallic lead (coupling strength $\mathrm{\ensuremath{\Gamma}}$). A one-parameter scaling law appears in the large-NNN conformal regime, where the differential conductance G=dI/dVG=dI/dVG=dI/dV depends on the applied voltage only through the dimensionless combination $\ensuremath{\xi}=eVJ/{\mathrm{\ensuremath{\Gamma}}}^{2}$. Low and high voltages are related by the duality $G(\ensuremath{\xi})=G(\ensuremath{\pi}/\ensuremath{\xi})$. This provides for an unambiguous signature of the conformal symmetry in tunneling spectroscopy.
The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work [Phys. Rev. Lett 102, 216803 (2009)]. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage VVV. In the linear-response regime $V\ensuremath{\rightarrow}0$, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V<TV<TV<T, while it obeys a distinct nonequilibrium profile for V>TV>TV>T. We furthermore provide different signatures of the transition in the finite-frequency current noise and ac conductance via a recently developed functional renormalization group (FRG) approach. The generalization of our analysis to nonequilibrium transport through a resonant level coupled to two chiral Luttinger liquid leads, generated by fractional quantum Hall edge states, is discussed. Our work on the dissipative resonant level has direct relevance to experiments on a quantum dot coupled to a resistive environment, such as H. Mebrahtu et al., [Nature (London) 488, 61 (2012)].
Understanding the charging of exceptionally narrow levels in quantum dots in the presence of interactions remains a challenge within mesoscopic physics. We address this fundamental question in the generic model of a narrow level capacitively coupled to a broad one. Using bosonization we show that for arbitrary capacitive coupling charging can be described by an analogy to the magnetization in the anisotropic Kondo model, featuring a low-energy crossover scale that depends in a power-law fashion on the tunneling amplitude to the level. Explicit analytical expressions for the exponent are derived and confirmed by detailed numerical and functional renormalization-group calculations.
Based on the recent paper [Phys. Rev. Lett. 102, 216803 (2009)], we study the nonequilibrium occupation number nd{n}_{d}nd​ and charge susceptibility $\ensuremath{\chi}$ of a resonance level close to dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a delocalized phase for weak dissipation and a localized phase for strong dissipation. The resonance level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic bosonic bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. Within the nonequilibrium renormalization-group approach, we calculate nonequilibrium magnetization MMM and spin susceptibility $\ensuremath{\chi}$ in the effective Kondo model, corresponding to $2{n}_{d}\ensuremath{-}1$ and $\ensuremath{\chi}$ of a resonance level, respectively. We demonstrate the smearing of the KT transition in the nonequilibrium magnetization MMM as a function of the effective anisotropic Kondo couplings, in contrast to a perfect jump in MMM at the transition in equilibrium. In the limit of large bias voltages, we find MMM and $\ensuremath{\chi}$ at the KT transition and in the localized phase show deviations from the equilibrium Curie-law behavior. As the system gets deeper in the localized phase, both ${n}_{d}\ensuremath{-}1/2$ and $\ensuremath{\chi}$ decrease more rapidly to zero with increasing bias voltages.
We study the nonlinear steady-state transport of spinless fermions through a quantum dot with a local two-particle interaction. The dot degree of freedom is in addition coupled to a phonon mode. This setup combines the non-equilibrium physics of the interacting resonant level model and that of the Anderson-Holstein model. The fermion-fermion interaction defies a perturbative treatment. We mainly focus on the antiadiabatic limit, with the phonon frequency being larger than the lead-dot tunneling rate. In this regime also the fermion-boson coupling cannot be treated perturbatively. Our goal is two fold. We investigate the competing roles of the fermion-fermion and fermion-boson interactions on the emergent low-energy scale TK{T}_{\mathrm{K}}TK​ and show how TK{T}_{\mathrm{K}}TK​ manifests in the transport coefficients as well as the current-voltage characteristics. For small to intermediate interactions, the latter is in addition directly affected by both interactions independently. With increasing fermion-boson interaction the Franck-Condon blockade suppresses the current at small voltages and the emission of phonons leads to shoulders or steps at multiples of the phonon frequency, while the local fermion-fermion interaction implies a negative differential conductance at voltages larger than TK{T}_{\mathrm{K}}TK​. We, in addition, use the model to investigate the limitations of our low-order truncated functional renormalization group approach on the Keldysh contour. In particular, we quantify the role of the broken current conservation.